On the exciton problem in transition metal dichalcogenides

FENG Yibiao; ZHANG Tiantian; ZHOU Jun; DOU Ruifen

doi:10.12202/j.0476-0301.2023192

Journal of Beijing Normal University(Natural Science) > 2023 > 59(6): 979-991. > DOI: 10.12202/j.0476-0301.2023192

FENG Yibiao, ZHANG Tiantian, ZHOU Jun, DOU Ruifen. On the exciton problem in transition metal dichalcogenides[J]. Journal of Beijing Normal University(Natural Science), 2023, 59(6): 979-991. DOI: 10.12202/j.0476-0301.2023192

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On the exciton problem in transition metal dichalcogenides

Department of Physics，Beijing Normal University，100875，Beijing，China

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Received Date: June 07, 2023
Available Online: December 03, 2023

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Abstract

Abstract

The basic concepts of excitons and exciton complexes in TMD materials are discussed in this work, including bright and dark excitons, neutral and charged excitons, intralayer and interlayer excitons, and others． Further, methods are reviewed, of manipulating and tuning exciton complexes in TMD materials through strain, electrical and magnetic field, interlayer twist between neighboring layers． Finally, future research directions and applications of excitonic device are discussed．
- transition metal dichalcogenides (TMD),
- interaction between light and matter,
- exciton

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On the exciton problem in transition metal dichalcogenides